DESCRIPTION

UTC UTT4N15-F is a N-Channel enhancement mode power

field effect transistors are using trench DMOS technology.  

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficiency fast switching applications.

FEATURES

* RDS(ON) < 65 mΩ @ VGS=10V, ID=4.0A

RDS(ON) < 85 mΩ @ VGS=6.0V, ID=2.0A

* Improved dv/dt capability

* Fast switching