DESCRIPTION

The UTC UGN65R050 is a gallium nitride (GaN) FETs power

devices offers the most efficient GaN solution with lifetime reliability

and cost advantages. GaN transistors switch much faster than

silicon MOSFETs, offering the potential to achieve lower-switching

losses.

FEATURES

* RDS(ON) ≤ 65 mΩ @ VGS=12V, ID=4.0A

* Easy to use, compatible with standard gate drivers

* Excellent QG x RDS(ON) figure of merit (FOM)

* Low QRR, no free-wheeling diode required

* Low switching loss