DESCRIPTIONA

The UTC USG15R095H-N is a Silicon N-channel Power

MOSFET, it are designed with fast reverse recovery times that

enhance efficiency in high-speed switching applications by

reducing the delay between the turn-off and turn-on states. The

low drain-source on-resistance RDS(ON) contributes to minimal

power losses and improved thermal management, making them

ideal for applications requiring high current handling with low

energy dissipation.

The UTC USG15R095H-N have better characteristics,

including fast switching time, low on resistance, low gate charge

and especially excellent avalanche characteristics.

FEATURES

* RDS(ON) ≤ 9.5 mΩ @ VGS=10V, ID=50A

 RDS(ON) ≤ 13.1 mΩ @ VGS=10V, ID=100A

* High ruggedness

* Improved dv/dt Capability

* 100% Avalanche Tested