SILICON CARBIDE SCHOTTKY BARRIER DIODES
DESCRIPTION
The UCBD50120 is an SiC Schottky barrier diodes (SBDs)
feature high reverse voltage ratings. In addition to SBDs with
short reverse recovery time (trr), provides 1200V SBDs with a
junction barrier Schottky (JBS) structure that provide low leakage
current (Ir) and high surge current capability required for
switched-mode power supplies. These devices help improve the
efficiency of switched-mode power supplies.
FEATURES
* Zero Forward/Reverse Recovery Current
* High Blocking Voltage
* High Frequency Operation
* Positive Temperature Coefficient on VF
* Temperature Independent Switching Behavior
* High surge current capability |