DESCRIPTION

The UTC UT8NP06M incorporates a N-channel MOSFET and a

P-channel MOSFET， it uses UTC’s advanced technology to provide

customers a minimum on-state resistance, high switching speed, low

gate charge and cost effectiveness.

The UTC UT8NP06M is universally applied in low voltage

applications.

FEATURES

*N-CHANNEL

*RDS(ON) ≤ 56 mΩ @ VGS=10V, ID=4.0A

RDS(ON) ≤ 60 mΩ @ VGS=4.5V, ID=4.0A

*P-CHANNEL

RDS(ON) ≤ 75 mΩ @ VGS=-10V, ID=-4.0A

RDS(ON) ≤102 mΩ @ VGS=-4.5V, ID=-4.0A

* High switching speed