DESCRIPTION

The UCBD20120A is an SiC Schottky barrier diodes (SBDs)

feature high reverse voltage ratings. In addition to SBDs with

short reverse recovery time (trr), provides 1200V SBDs with a

junction barrier Schottky (JBS) structure that provide low leakage

current (Ir) and high surge current capability required for

switched-mode power supplies. These devices help improve the

efficiency of switched-mode power supplies.

FEATURES

* Zero Forward/Reverse Recovery Current

* High Blocking Voltage

* High Frequency Operation

* Positive Temperature Coefficient on VF

* Temperature Independent Switching Behavior

* High surge current capability