DESCRIPTION

The UTC USG60P08M is a P-channel Power MOSFET, it

uses UTC’s advanced technology to provide the customers with

low RDS(ON) characteristic by high cell density trench technology.

FEATURES

* RDS(ON) ≤ 19.5 mΩ @ VGS=-10V, ID=-30A

* RDS(ON) ≤ 29 mΩ @ VGS=-4.5V, ID=-30A

* Extremely low on-resistance RDS(ON)

* Excellent Low Ciss