DESCRIPTION

The UTC 5NN50-SE1 is a dual N-Channel enhancement mode

silicon gate power MOSFET with Fast Body Diode, is designed high

voltage, high speed power switching applications such, is designed

to have better characteristics, such as fast switching time, low gate

charge, low on-state resistance and have a high rugged avalanche

characteristics. This power MOSFET is usually used at high speed

switching applications in power supplies, PWM motor controls, high

efficient AC to DC converters and bridge circuits.

FEATURES

* RDS(ON) ≤ 3.1 Ω @ VGS=10V, ID=1.5A

* Fast body diode MOSFET technology

* Fast Switching Speed

* Simple Drive Requirement