650V TRENCH GATE FIELD-STOP IGBT
DESCRIPTION
The UTC UTG7N65Q-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses
UTC’s advanced technology to provide customers with high switching speed, low saturation
voltage and low switching loss, etc.
The UTC UTG7N65Q-S is suitable for the resonant or soft switching applications.
FEATURES
* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(SAT).Typ.=1.6V @ IC=7.0A, VGE=15V
(TC =25°C) |