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DESCRIPTION

The UTT08N02Z employs advanced MOSFET technology and features low gate charge

while maintaining low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC

converters and allows operation to higher switching frequencies.

FEATURES

* RDS(ON) ≤ 312 mΩ @ VGS=4.5V, ID=450mA

RDS(ON) ≤ 461 mΩ @ VGS=2.5V, ID=450mA

RDS(ON) ≤ 888 mΩ @ VGS=1.8V, ID=350mA

* Low Capacitance

* Low Gate Charge

* Fast Switching Capability

* Avalanche Energy Specified

* With ESD protection