N-CHANNEL SGT ENHANCEMENT POWER MOSFET

DESCRIPTION

The UTC USG10R550M is a N-channel Power MOSFET,

it uses UTC’s advanced technology to provide the customers

with high switching speed and low gate charge, etc.

The UTC USG10R550M applies to primary side switch,

synchronous rectifier, Motor Drives, etc.

FEATURES

* RDS(ON) ≤ 55 mΩ @ VGS=10V, ID=5.0A

RDS(ON) ≤ 70 mΩ @ VGS=4.5V, ID=3.0A

* High Cell Density Trench Technology

* High Power and Current Handling Capability