N-CHANNEL SGT ENHANCEMENT POWER MOSFET

DESCRIPTION

The UTC USG10R068M is a N-channel Power MOSFET, it

uses UTC’s advanced technology to provide the customers with

low RDS(ON) characteristic by high cell density trench technology.

FEATURES

* RDS(ON) ≤ 6.8 mΩ @ VGS=10V, ID=30A

* RDS(ON) ≤ 9.0 mΩ @ VGS=4.5V, ID=20A

* Extremely low on-resistance RDS(ON)

* Excellent Low Ciss