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Home > IGBT
USG10R035H Datasheet
 

N-CHANNEL SGT ENHANCEMENT POWER MOSFET

 

 

DESCRIPTION

The UTC USG10R035H is a N-channel Power MOSFET,

it uses UTCs advanced technology to provide the customers

with high switching speed and low gate charge, etc.

The UTC USG10R035H applies to primary side switch,

synchronous rectifier, Motor Drives, etc.

 

FEATURES

* RDS(ON) 3.5 mΩ @ VGS=10V, ID=20A

* High Cell Density Trench Technology

* High Power and Current Handling Capability

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