DESCRIPTION

This device employs advanced MOSFET technology and

features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves

the overall efficiency of DC/DC converters and allows operation

to higher switching frequencies.

FEATURES

* RDS(ON) ≤ 88 mΩ @ VGS=-10V, ID=-2.0A

RDS(ON) ≤ 140 mΩ @ VGS=-4.5V, ID=-1.7A

* Low Capacitance

* Low Gate Charge

* Fast Switching Capability

* With ESD Protected

* Avalanche Energy Specified

* Enhancement mode

* Logic level

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness