DESCRIPTION

The UTC UT20N03V is an N-channel enhancement power

MOSFET using UTC’s advanced technology in the various

components of gate charge and capacitance have been optimized

to reduce switching losses. Low gate resistance and very low Miller

charge enable excellent performance with both adaptive and fixed

dead time gate drive circuits. Very low RDS(ON) has been

maintained to provide a sub logic-level device, designed to

minimize losses in power conversion applications.

FEATURES

* RDS(ON) ≤ 11.5 mΩ @ VGS=10V, ID=20A

RDS(ON) ≤ 16.5 mΩ @ VGS=4.5V, ID=10A

RDS(ON) ≤ 25.5 mΩ @ VGS=2.5V, ID=7.0A

* High Switching Speed

* High Current Capacity