12A, 20V N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC UT2009 is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
FEATURES
* RDS(ON) ≤ 6.0 mΩ @ VGS=10V, ID=12A
RDS(ON) ≤ 7.1 mΩ @ VGS=4.5V, ID=10A
RDS(ON) ≤ 11 mΩ @ VGS=2.5V, ID=8.0A
* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage |