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Home > IGBT
UTG60N65WBFQ Datasheet
 
650V TRENCH GATE FIELD-STOP IGBT

 

 

DESCRIPTION

The UTC UTG60N65WBFQ is an Trench Field-Stop

Insulated Gate Bipolar Transistor. it uses UTCs advanced

technology to provide customers with high switching speed, low

saturation voltage and low switching loss, etc.

The UTC UTG60N65WBFQ is suitable for the resonant or

soft switching applications.

 

FEATURES

* High switching speed

* High avalanche ruggedness

* Low saturation voltage:

VCE(SAT).Typ.=1.36V @ IC=60A, VGE=15V (TC =25°C)

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