DESCRIPTION

This UT3N06Z is an N-channel power MOSFET providing

very low on-resistance. It has high efficiency and perfect

cost-effectiveness. It can be generally applied in the commercial

and industrial fields.

FEATURES

* RDS(ON) ≤ 65 mΩ @ VGS=10V, ID=1.5A

RDS(ON) ≤ 90 mΩ @ VGS=4.5V, ID=1.5A

* Fast switching capability

* Enhanced ESD capability