1200V TRENCH GATE FIELD-STOP IGBT

DESCRIPTION

The UTC UTG12N120-S is an Trench Field-Stop Insulated Gate

Bipolar Transistor. it uses UTC’s advanced technology to provide

customers with high switching speed, low saturation voltage and low

switching loss, etc.

The UTC UTG12N120-S is suitable for the resonant or soft

switching applications.

FEATURES

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(SAT).Typ.=1.6V @ IC=12A, VGE=15V

(TC =25°C)