650V TRENCH GATE FIELD-STOP IGBT

DESCRIPTION

The UTC UTG60N65FQ-S is an Trench Field-Stop

Insulated Gate Bipolar Transistor. it uses UTC’s advanced

technology to provide customers with high switching speed, low

saturation voltage and low switching loss, etc.

The UTC UTG60N65FQ-S is suitable for the resonant or

soft switching applications.

FEATURES

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(SAT).Typ.=1.64V @ IC=60A,

VGE=15V (TC =25°C)