N-CHANNEL SGT ENHANCEMENT POWER MOSFET
DESCRIPTION
The UTC USG10R072M is a N-channel Power MOSFET,
it uses UTC’s advanced technology to provide the customers
with high switching speed and low gate charge, etc.
The UTC USG10R072M applies to primary side switch,
synchronous rectifier, Motor Drives, etc.
FEATURES
* RDS(ON) ≤ 7.2 mΩ @ VGS=10V, ID=45A
RDS(ON) ≤ 8.8 mΩ @ VGS=4.5V, ID=45A
* High Cell Density Trench Technology
* High Power and Current Handling Capability |