3.0A, 1800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N180-E3 provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.5A
* Low Reverse Transfer Capacitance
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness |