650V TRENCH GATE FIELD-STOP IGBT

DESCRIPTION

The UTC UTG75N65ND-S is an Trench Field-Stop Insulated

Gate Bipolar Transistor. it uses UTC’s advanced technology to

provide customers with high switching speed, low saturation

voltage and low switching loss, etc.

The UTC UTG75N65ND-S is suitable for the resonant or soft

switching applications.

FEATURES

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=75A, VGE=15V

(TC =25°C)