FIELD EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION TYPE

DESCRIPTION

The UTC 2SK3557 is an N-channel junction silicon FET, it

uses UTC’s advanced technology to provide the customers with

low IGSS and low CRSS.

The UTC 2SK3557 is suitable for audio frequency low noise

amplifier, impedance conversion, infrared sensor applications.

FEATURES

* Small Ciss

* Ultralow Noise Figure

* High breakdown voltage: VGDS=−15V

* High input impedance: IGSS=−1nA (max) at VGS=−10V