1200V TRENCH GATE FIELD-STOP IGBT

DESCRIPTION

The UTC UTG25N120-G2 is an Trench Field-Stop Insulated

Gate Bipolar Transistor. it uses UTC’s advanced technology to

provide customers with high switching speed, low saturation

voltage and low switching loss, etc.

The UTC UTG25N120-G2 is suitable for the resonant or soft

switching applications.

FEATURES

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(sat), typ =1.8V @ IC=25A (TC =25°C)

* Low switching loss: EOFF, typ=2.36mJ @ IC=25A (TC =25°C)