9.0A, 1200V N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 9N120-E3 provide excellent RDS(ON), low gate

charge and operation with low gate voltages. This device is

suitable for use as a load switch or in PWM applications.

FEATURES

* RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=4.5A

* Low Reverse Transfer Capacitance

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness