DUAL NPN WIDEBAND SILICON RF TRANSISTOR

DESCRIPTION

The UTC UFU520Y are Dual NPN silicon RF transistor for high

speed, low noise applications in a plastic.

The UTC UFU520Y suitable for small signal to medium power

applications up to 2 GHz.

FEATURES

* Low noise, high breakdown RF transistor

* Minimum noise figure (NFmin) = 0.65dB at 900 MHz

* Maximum stable gain 19dB at 900 MHz

* 11GHz fT silicon technology