FIELD EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION TYPE

DESCRIPTION

The UTC 2SK209 is an N-channel junction silicon FET, it uses

UTC’s advanced technology to provide the customers with low IGSS

and low CRSS.

The UTC 2SK209 is suitable for audio frequency low noise

amplifier, impedance conversion, infrared sensor applications.

FEATURES

* High breakdown voltage: VGDS=−50V

* High input impedance: IGSS=−1nA (max) at VGS=−30V