HIGH AND LOW SIDE DRIVER

DESCRIPTION

The UTR2117 are high voltage, high speed power MOSFET

and IGBT driver. Proprietary HVIC and latch immune CMOS

technologies enable ruggedized mono-lithic construction. The logic

input is compatible with standard CMOS outputs. The output driver

features a high pulse current buffer stage designed for minimum

cross-conduction. The floating channel can be used to drive an

N-channel power MOSFET or IGBT in the high-side or low-side

configuration which operates up to 600V.

FEATURES

* Floating channel designed for bootstrap operation

* Fully operational to 600V

* Tolerant to negative transient voltage, dV/dt immune

* Gate drive supply range from 10 V to 20V

* Undervoltage lockout

* CMOS Schmitt-triggered inputs with pull-down

* Output in phase with input