60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR

DESCRIPTION

The UTP2012Z is an PNP low VCE(SAT) Breakthrough In Small
Signal (BISS) transistor in a medium power.
NPN complement: UTP2012Z.

FEATURES

* Very low collector-emitter saturation voltage VCE(SAT)
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors