2A, 1000V N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 2N100-C provide excellent RDS(ON), low gate

charge and operation with low gate voltages. This device is

suitable for use as a load switch or in PWM applications.

FEATURES

* RDS(ON) ≤ 8.5Ω @ VGS=10V, ID=1.0A

* Low Reverse Transfer Capacitance

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness