170mA, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

The UTC BSS123Z uses advanced technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

FEATURES

* RDS(on) ≤ 6.0Ω @ VGS=10V, ID=100mA

* ESD Protected

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness