50A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET

DESCRIPTION

The UTC UTT50N06M is a N-channel Power MOSFET, it uses

UTC’s advanced technology to provide the customers with low

RDS(ON) characteristic by high cell density trench technology.

The UTC UTT50N06M is suitable for high efficiency

synchronous rectification in SMPS, UPS, hard switched and high

frequency circuits.

FEATURES

* RDS(ON) ≤ 12 mΩ @ VGS=10V, ID=25A

RDS(ON) ≤ 15 mΩ @ VGS=4.5V, ID=20A

* High Cell Density Trench Technology

* High Power and Current Handling Capability