8A, 30V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

The UTC UTT10NN03 is a N-channel Power MOSFET, it uses

UTC’s advanced technology to provide the customers with low

Rdson characteristic by high cell density trench technology.

FEATURES

* RDS(ON) < 20 mΩ @ VGS=10V, ID=9.0A

RDS(ON) < 30 mΩ @ VGS=4.5V, ID=7.0A

* Fast Switching Speed

* Simple Drive Requirement