DESCRIPTION

The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power
switching applications such as switching regulators, switching
converters, solenoid, motor drivers, relay drivers.

FEATURES

* Low RDS(ON)< 0.87Ω @ VGS=10V. ID = 4.4A
* Single Pulse Avalanche Energy Rated
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance