DESCRIPTION

The UTC 13N65-Q are N-Channel enhancement mode power
field effect transistors (MOSFET) which are produced by using
UTC’s proprietary, planar stripe and DMOS technology.
These devices are suited for high efficiency switch mode power
supply. To minimize on-state resistance, provide superior switching
performance and withstand high energy pulse in the avalanche and
commutation mode, the advanced technology has been especially
tailored.

FEATURES

* RDS(ON) < 0.85Ω @ VGS = 10V, ID = 6.5A
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness