DESCRIPTION

UTC UTT100N07 is a N-Channel enhancement mode power
field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency fast switching applications.

FEATURES

* RDS(ON) < 2.8 mΩ @ VGS=10V, ID=20A
RDS(ON) < 5.4 mΩ @ VGS=4.5V, ID=10A
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed