DESCRIPTION

The UTC UTT15N10M-Q is a N-channel Power MOSFET, it
uses UTC’s advanced technology to provide the customers with
low Rdson characteristic by high cell density trench technology.
The UTC UTT15N10M-Q is suitable for high efficiency
synchronous rectification in SMPS, UPS, hard switched and high
frequency circuits.

FEATURES

* RDS(ON) ≤ 175 mΩ @ VGS=10V, ID=5.0A
RDS(ON) ≤ 203 mΩ @ VGS=4.5V, ID=1.0A
* High Cell Density Trench Technology
* High Power and Current Handling Capability