DESCRIPTION

The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power
switching applications such as switching regulators, switching
converters, solenoid, motor drivers, relay drivers.

FEATURES

* RDS(ON) < 1.1Ω @ VGS=10V, ID=3.0A
* Avalanche Energy Specified
* Fast Switching Capability
* Linear Transfer Characteristics
* High Input Impedance