25A, 20V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET

DESCRIPTION

The UTC UND02R100L is an N-channel Power MOSFET, it
uses UTC’s advanced technology to provide the customers with
low Rdson characteristic by high cell density trench technology.
The UTC UND02R100L is suitable for high efficiency
synchronous rectification in SMPS, UPS, hard switched and high
frequency circuits.

FEATURES

* RDS(ON) ≤ 8.2 mΩ @ VGS=4.5V, ID=8.0A
RDS(ON) ≤ 9.5 mΩ @ VGS=2.5V, ID=7.0A
RDS(ON) ≤ 12 mΩ @ VGS=1.8V, ID=4.0A
* High Cell Density Trench Technology
* High Power and Current Handling Capability