DESCRIPTION

UTC UTT08N02Z-F is a N-Channel enhancement mode
power field effect transistors are using trench DMOS
technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency fast switching applications.

FEATURES

* RDS(ON) < 300 mΩ @ VGS=4.5V, ID=0.5A
* Suit for 1.5v gate drive applications
* Improved dv/dt capability
* Fast switching
* Green device available