-3.7A, -30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC UT2309-H is P-Channel enhancement mode power
field effect transistors are using trench DMOS technology. This
advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode. These devices are well suited for high efficiency fast
switching applications.
FEATURES
* RDS(ON) < 55 mΩ @ VGS =-10V, ID =-3.0A
RDS(ON) < 80 mΩ @ VGS =-4.5V, ID =-2.0A
* Extremely low on-resistance due to high density cell
* Perfect thermal performance and electrical capability with
advanced technology of trench process |