DESCRIPTION

The UTC  UT2315-H is P-Channel enhancement mode power

field effect transistors are using trench DMOS technology. This

advanced technology has been especially tailored to minimize

on-state resistance, provide superior switching performance, and

withstand high energy pulse in the avalanche and commutation

mode. These devices are well suited for high efficiency fast

switching applications.

FEATURES

* Extremely low on-resistance due to high density cell

* Perfect thermal performance and electrical capability with

advanced technology of trench process