DESCRIPTION

The N-Channel enhancement mode silicon gate power

MOSFET is designed for high voltage, high speed power

switching applications such as  switching regulators, switching

converters, solenoid, motor drivers, relay drivers.  

FEATURES

* R _DS(ON)  < 0.95 @ V _GS =10V, I _D=3.0A

* Avalanche Energy Specified

* Fast Switching Capability

* Linear Transfer Characteristics

* High Input Impedance