9A, 950V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 9N95-E uses UTC!ˉs advanced proprietary, planar
stripe, DMOS technology to provide excellent R , low gate
DS(ON)
charge and operation with low gate voltages. This device is suitable
for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) < 1.4 @ V GS = 10V, I D = 4.5A
* Ultra Low Gate Charge ( Typical 45 nC ) RSS = Typical 14 pF )
* Low Reverse Transfer Capacitance ( C
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness |
