1.6A, 100V HEXFET POWER MOSFET
DESCRIPTION
The UTC UTT2N10-H is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and low gate charge.
FEATURES
* RDS(ON) < 235 mΩ @ VGS=4.5V, ID=1.3A
RDS(ON) < 220 mΩ @ VGS=10V, ID=1.6A
* High switching speed
* Low gate charge |