18A, 200V, 0.20Ω, N-CHANNEL POWER MOSFET

DESCRIPTION

These kinds of n-channel power MOSFET field effect transistor

have low conduction power loss, high input impedance, and high

switching speed, Linear Transfer Characteristics, so can be use in

a variety of power conversion applications.

The  UF640-Q suitable for resonant and PWM converter

topologies.

FEATURES

* RDS(ON) < 0.20Ω @ VGS=10V, ID=10A

* Fast switching capability

* Avalanche energy specified