3A, 900V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N90-E provides excellent RDS(ON), low gate charge
and operation with low gate voltages. This device is suitable for
use as a load switch or in PWM applications.
FEATURES
* RDS(ON)<4.8Ω @VGS=10 V
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness |