18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET
DESCRIPTION
These kinds of n-channel power MOSFET field effect
transistor have low conduction power loss, high input
impedance, and high switching speed, Linear Transfer
Characteristics, so can be use in a variety of power conversion
applications.
The UF640-P suitable for resonant and PWM converter
topologies.
FEATURES
* RDS(ON) =0.18Ω@ VGS=10V, ID=10A
* Ultra Low gate charge (typical 43nC)
* Low reverse transfer capacitance (CRSS = typical 100 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness |
