NPN SILICON POWER TRANSISTOR
DESCRIPTION
These devices are designed for high–voltage, high–speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V SWITCHMODE.
FEATURES
* Reverse biased SOA with inductive load @ Tc=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tc = 290ns @ 1A, 100°C.
* 700V blocking capability
FEATURES
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits |
